rej03g0533-0200 rev.2.00 oct 09, 2009 page 1 of 6 hat2192wp silicon n channel power mos fet power switching rej03g0533-0200 rev.2.00 oct 09, 2009 features ? low on-resistance ? low drive current ? high density mounting outline renesas package code: pwsn0008da-a (package name: wpak) g d sss dd d 4 123 567 8 1, 2, 3 source 4 gate 5, 6, 7, 8 drain 8 7 6 5 2 1 3 4 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 250 v gate to source voltage v gss 30 v drain current i d 10 a drain peak current i d (pulse) note1 20 a body-drain diode reverse drain current i dr 10 a body-drain diode reverse drain peak current i dr (pulse) note1 20 a avalanche current i ap note3 5 a avalanche energy e ar note3 1.5 mj channel dissipation pch note2 25 w channel to case thermal impedance ch-c 5 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c
hat2192wp rej03g0533-0200 rev.2.00 oct 09, 2009 page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 250 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 250 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.0 ? 4.5 v v ds = 10 v, i d = 1 ma forward transfer admittance |yfs| 5 8 ? s i d = 5 a, v ds = 10 v note4 static drain to source on state resistance r ds(on) ? 0.2 0.23 i d = 5 a, v gs = 10 v note4 input capacitance ciss ? 710 ? pf output capacitance coss ? 110 ? pf reverse transfer capacitance crss ? 8 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 26 ? ns rise time t r ? 18 ? ns turn-off delay time t d(off) ? 54 ? ns fall time t f ? 8 ? ns i d = 5 a v gs = 10 v r l = 25 rg = 10 total gate charge qg ? 15 ? nc gate to source charge qgs ? 4 ? nc gate to drain charge qgd ? 6 ? nc v dd = 200 v v gs = 10 v i d = 10 a body-drain diode forward voltage v df ? 0.85 1.4 v i f = 10 a, v gs = 0 note4 body-drain diode reverse recovery time trr ? 110 ? ns i f = 10 a, v gs = 0 dif/dt = 100 a/ s notes: 4. pulse test
hat2192wp rej03g0533-0200 rev.2.00 oct 09, 2009 page 3 of 6 main characteristics 02 4 6810 dra i n to source v o l tage v ds ( v ) dra i n c urrent i d (a) typi ca l o ut p ut ch aracter is t i c s gate to source v o l tage v gs ( v ) dra i n c urrent i d (a) typi ca l t ran sf er ch aracter is t i c s 1 100 10 0 . 1 1 0 . 01 dra i n c urrent i d (a) dra i n to source on state re sis tance r ds(on) ( ) stat i c dra i n to source on state re sis tance vs. dra i n c urrent ( typi ca l ) dra i n to source v o l tage v ds ( v ) dra i n c urrent i d (a) m a xi mum sa f e op erat i on area c a s e t em p erature t c ( ) stat i c dra i n to source on state re sis tance r ds(on) ( ) stat i c dra i n to source on state re sis tance vs. t em p erature ( typi ca l ) 02 4 6810 15 10 5 0 0 . 6 0 . 8 1 . 0 0 . 2 0 .4 0 - 25 0 50 25 75 100 125 150 0 . 001 0 . 01 0 . 1 1 10 100 10 8 6 4 2 0 0 . 1 1 10 100 1000 pu ls e t e s t v gs = 10 v i d = 10 a v ds = 10 v pu ls e t e s t t c = 75 25 ? 25 gs = 10 v t a = 25 pu ls e t e s t 5 a t a = 25 1 sh ot op erat i on i n t his area is li m i ted by r ds(on) 10 pw = 100 5 .4 v 5 . 7 v 6 v v gs = 5 . 1 v 10 v t a = 25 pu ls e t e s t 7 . 5 v 6 . 2 v 10000 1000 10 100 1 c a p ac i tance c ( pf ) typi ca l c a p ac i tance vs. dra i n to source v o l tage dra i n to source v o l tage v ds ( v ) ciss c o ss c r ss 0 100 50 150 v gs = 0 f = 1 mhz t a = 25
hat2192wp rej03g0533-0200 rev.2.00 oct 09, 2009 page 4 of 6 400 0 16 300 12 200 8 100 0 4 4 8 12 16 20 0 gate ch arge qg (n c ) drain to source v oltage v ds ( v ) gate to source v oltage v gs ( v ) d y namic in p ut ch aracteri s tic s (t yp ical) 0 0.4 0.8 1.2 1.6 2.0 20 8 source to drain v oltage v sd ( v ) re v er s e drain c urrent vs . source to drain v oltage (t yp ical) re v er s e drain c urrent i dr (a) c a s e tem p erature tc ( ) gate to source c uto ff v oltage vs . c a s e tem p erature (t yp ical) gate to source c uto ff v oltage v gs(o ff ) ( v ) 4 0 12 16 0 5 -25 0 25 50 75 100 125 150 2 1 3 4 v ds v gs v dd = 200 v 100 v 50 v v dd = 200 v v ds = 10 v i d = 10 ma 1 ma 0.1 ma i d = 10 a ta = 25 gs = 0 v ta = 25 pul s e te s t 100 v 50 v
hat2192wp rej03g0533-0200 rev.2.00 oct 09, 2009 page 5 of 6 switc h ing time te s t c ircuit pul s e widt h pw ( s ) normali z ed tran s ient t h ermal im p edance vs . pul s e widt h normali z ed tran s ient t h ermal im p edance (t) 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 sh ot p ul s e d m p pw t d = pw t c h - c(t) = s (t) ? c h - c c h - c = 5 c / w, tc = 25 c in m onitor d.u.t. v in 10 v r l v dd = 125 v t r t d(on) v in 90% 90% 10% 10% v out t d(o ff ) v out m onitor 10 90% 10% t f wa v e f orm
hat2192wp rej03g0533-0200 rev.2.00 oct 09, 2009 page 6 of 6 package dimensions 4. 21 typ 5 . 9 0 . 2 typ 0 . 8 m a x 6 . 1 1 . 27 typ 0 . 7 typ 0 . 0 4mi n + 0 . 1 - 0 . 2 + 0 . 1 - 0 . 3 1 . 27 typ 0 . 05 m a x 0 mi n 0 . 635 m a x stand - o ff 5 . 1 0 . 2 4. 9 0 . 1 0 . 5 0 . 15 3 . 8 0 . 20 . 5 0 . 15 0 .4 0 . 06 3 . 9 0 . 2 ? n 0008da - a wpa kv 0 . 075g m ass [typ.] r ene sas c ode jeit a package c ode pre vi ou s c ode ( ni/ pd / au pl at i ng) n ot i ce :th e re v er s e p attern o f d i e -p ad s u pp ort l ead de s cr ib ed a b o v e e xis t s. un i t : mm package n ame wpa k ordering information part no. quantity shipping container hat2192wp-el-e 2500 pcs taping
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